Silicon-based PIN photo diodes with 3 x 3 mm² sensitive regions were successfully fabricated in this work. The electrical properties of PIN diodes were investigated intensively. The dark current of Silicon PIN photodiodes has been found to be 200nA at a reverse voltage of -70V. The PIN photo diodes have also been found to reach the full depletion mode and a capacitance value of 5.5 pF has been achieved at -40V. When the photo- sensitive region of the photo diode was illuminated with a help of 450 nm LED light. The photon current of 310 nA was obtained at a reverse voltage of -70V by using 450nm LED light. As the results of first evaluation, the experimental results also showed high dark current value and low photocurrent efficiency. The problems affecting the electrical performance of PIN diodes have been addressed in this research work. Additionally, all the results were carried out at room temperature.

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