Vol. 4, 2019

Original research papers

Radiation Detectors

ELECTRICAL CHARACTERISTICS AND ALPHA PARTICLE DETECTION PERFORMANCE OF A NEWLY DEVELOPED PIN PHOTODIODE

Ercan Yilmaz, Emre Doganci, Farid Ahmadov, Gadir Ahmadov, Azar Sadigov, Samir Suleymanov

Pages: 145–147

DOI: 10.37392/RapProc.2019.29

The Silicon PIN photodiodes (Si-PIN) with an active area of 5.0 x 5.0 mm2 were designed and fabricated by using a conventional photolithography process at the Center of Nuclear Radiation Detectors Research and Application (NÜRDAM) for the investigation of electrical characteristics and alpha particle detection performance. To obtain the device electrical specifications, the current-voltage (I-V) and the capacitance-voltage (C-V) measurements were carried out in the photoconductive mode. The Si-PIN photodiode was then used to detect alpha particles from different radioactive sources in a vacuum at room temperature. Photodiode dark current and capacitance were measured and found to be - 20 nA and 23pF, respectively, at -20 Volts (the operating voltage used during alpha particle detection). The possibilities of improving the parameters of the photodiode are discussed.
  1. M. Daraee, A. Araghi, M. Sadeghi, A. Hashemizadeh, “Investigation of thermal treatment on improving the performance behavior of Si PIN alpha radiation detectors,’’ Optik, vol. 184, pp. 364 - 369, May 2019.
    DOI: https://doi.org/10.1016/j.ijleo.2019.04.116
  2. S. M. Ahmed, Physic and Engineering of Radiation Detection, London, UK: Academic Press, 2007.
    Retrieved from: http://bookfi.net/dl/1085949/a947a5
    Retrieved on: May 10, 2019
  3. H. Tan, T. A. DeVol, “Development of a flow-cell alpha detector utilizing microencapsulated CsI: Tl granules and silicon PIN-photodiodes,’’ in 2001 IEEE Nucl. Sci. Sympos. Conf. Rec., San Diego (CA), USA, 2011, pp. 375 - 379.
    Retrieved from: https://ieeexplore.ieee.org/abstract/document/1008480
    Retrieved on: Sep. 10, 2019
  4. V. Drndaravic, “A very low-cost alpha-particle spectrometer,’’ Meas. Sci. Technol., vol. 19, no. 5, Apr. 2008.
    DOI: 10.1088/0957-0233/19/5/057001
  5. S. Srivastava, R. Henry, A. Topkar, ’’Characterization Of Pin Diode Silicon Radiation Detector,’’ J. Intel. Electron. Syst., vol. 1, no. 1, pp. 47 - 51, Nov. 2007.
    Retrieved from: https://scholar.google.com.tr/scholar?hl=tr&as_sdt=0%2C5&q=Characterization+Of+Pin+Diode+Silicon+Radiation+Detector& btnG=
    Retrieved on: Sep. 1, 2019
  6. K. Yamamoto, Y. Fuji, Y. Kotooka, T. Katayama, “Highly stable silicon pin photodiode,’’ Nucl. Instrum. Methods Phys. Res., vol. 253, no. 3, pp. 542 - 547, Jan. 1987.
    DOI: 10.1016/0168-9002(87)90545-6
  7. N. V. Loukianova et al., “Leakage current modeling of test structures for characterization of dark current in CMOS image sensors,’’ IEEE Trans. Electron Devices, vol. 50, no. 1, pp. 77 - 83, Jan. 2003.
    DOI: 10.1109/Ted.2002.807249
  8. M. Suzuki et al., “Electrical characterization of diamond PiN diodes for high voltage applications,’’ Phys. Status Solidi A, vol. 210, no. 10, pp. 2035 – 2039, Jul. 2013.
    DOI: 10.1002/pssa.201300051
  9. A. O. Goushcha, R. A. Metzler, C. Hicks, V. N. Kharkyanen, N. M. Berezetska, “Determination of the carrier collection efficiency function of Si photodiode using spectral sensitivity measurements,’’ in Book of Abstr. Integr. Optoelectron. Devices 2004, San Jose (CA), US, 2004.
    DOI: 10.1117/12.528361