The investigations of gamma irradiation response on silicon nanowires (SiNWs) based MOS capacitor with high- k of Yb₂O₃ is very important in the fields of semiconductors physics and nanotechnology. Hence, in this current work, we fabricated SiNWs using metal assisted chemical etching (MACE) technique and then Al/Yb ₂O₃/SiNWs/n-Si (100)/Al MOS capacitor was exposed to gamma rays using Co-60 source at different doses of 0-4Gy, respectively. Our experimental results demonstrated that the capacitance value in the accumulation region decreased with increasing in the radiation dose, while the C-V curves shifted toward negative voltage side. In addition, the interface states density (D_it) increased with an increase in the gamma irradiation exposure. The value of D_it was found in the range of 6.98×10⁰⁹ eV^-1 cm^-2 and 1.14×10¹⁰ eV^-1 cm^-2.

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