Vol. 10, 2025
Radiation Effects
RADIATION MODIFICATION OF CHALCOGENIDE NETWORK GLASS FORMERS: COMPARATIVE PREDICTION FOR As-S/Se BINARIES IN NANOCONFINED GEOMETRY
Oleh Shpotyuk, Mykola Vakiv, Roman Holovchak, Andriy Kovalskiy, Valentina Balitska, Mykhaylo Shpotyuk, Yaroslav Shpotyuk
Pages: 114-120
DOI: 10.37392/RapProc.2025.21
Abstract | References | Full Text (PDF)
Radiation-induced modification in network glass formers such as binary
arseno-chalcogenides As-X (X=S, Se) is critically reexamined accepted
possibility of volume restrictions in their realization. Destruction of
covalent bonds in these glasses under above-bandgap exposure or high-energy
irradiation is accompanied by relaxation into a new state. When this process
occurs via switching of hoteronuclear (As-X) bonds into homonuclear (As-As)
and (X-X) ones, like under intrinsic decomposition in As2X3,
an additional volume appears in the glass, resulting in a red shift of the
optical absorption edge (darkening effect). Assuming that double-bond-based
quasi-tetrahedral X=As(X1/2) 3 units are stabilized in
a glass due to inner pressure developed in nanoconfined geometry, an
opposite blue shift (bleaching effect) is expected. This analysis, based on
ab initio quantum-chemical modeling of atomic clusters, critically resolves
speculations about quasi-tetrahedral X=As(X1/2)3 units as the principal
species facilitating self-organization in arseno-chalcogenide networks.
-
Chalcogenide Glasses: Preparation, Properties and Application,
J.-L. Adam, X. Zhang, Eds., 1st ed., Cambridge, UK: Woodhead Publ., 2013.
Retrieved from: https://www.amazon.com/Chalcogenide-Glasses-Preparation-Properties-Applications/dp/0857093452
Retrieved on: Sep. 10, 2025 -
A. V. Kolobov, K. Tanaka, “Photoinduced phenomena in amorphous
chalcogenides: from phenomenology to nanoscale,” in
Handbook of Advanced Electronic and Photonic Materials and Devices, vol. 5, H. S. Nalwa, Eds., 2001, ch. 2,
pp. 47 – 90.
DOI: 10.1016/B978-012513745-4/50043-3 -
G. Lucovsky, D. A. Baker, M. A. Paesler,
J. C. Phillips, M. Thorpe, “Intermediate phases in binary and ternary
alloys. How far can we go with a semi-empirical bond-constraint theory?,”
J. Optoelectron. Adv. Mater., vol. 9, no. 10,
pp. 2979 – 2988, Oct. 2007.
Retrieved from: https://asu.elsevierpure.com/en/publications/intermediate-phases-in-binary-and-ternary-alloys-how-far-can-we-g
Retrieved on: Aug. 18, 2025 -
Z. U. Borisova, Glassy semiconductors, 1st ed., New York (NY), USA:
Plenum press, 1981.
DOI: 10.1007/978-1-4757-0851-6 -
R. Golovchak et al., “Structural model of homogeneous As–S glasses
derived from Raman spectroscopy and high-resolution XPS,”
Philos. Mag., vol. 90, no. 34, pp. 4489 – 4501, 2010.
DOI: 10.1080/14786435.2010.510455 -
O. Shpotyuk et al., “Coordination disordering in near-stoichiometric arsenic
sulfide glass,” J. Non-Cryst. Solids, vol. 402, pp. 236 – 243, Oct.
2014.
DOI: 10.1016/j.jnoncrysol.2014.06.013 -
O. Shpotyuk et al., “Intrinsic phase separation in low-temperature
quenched arsenic trisulfide glass,” J. Non-Cryst. Solids, vol.
430, pp. 16 – 20,
Dec. 2015.
DOI: 10.1016/j.jnoncrysol.2015.09.019 -
O. Shpotyuk, M. Hyla, V. Boyko, “Structural-topological genesis of
network-forming nanoclusters in chalcogenide semiconductor glasses,”
J. Optoelectron. Adv. Mater., vol. 15, no. 11 – 12,
pp. 1429 – 1437, 2013.
Retrieved from: https://joam.inoe.ro/articles/structural-topological-genesis-of-network-forming-nanoclusters-in-chalcogenide-semiconductor-glasses/
Retrieved on: Aug. 18, 2025 -
O. Shpotyuk, M. Hyla, V. Boyko, “Compositionally-dependent structural
variations in glassy chalcogenides: The case of binary As-Se system,”
Comput. Mater. Sci. vol. 110, pp. 144 – 151,
Dec. 2015.
DOI: 10.1016/j.commatsci.2015.08.015 -
O. Shpotyuk, M. Hyla, “Compositionally-dependent network-forming tendencies
in S-rich As-S glasses,” J. Optoelectron. Adv. Mater., vol. 19, no.
1 – 2,
pp. 48 – 56, Jan.-Feb. 2017.
Retrieved from: https://joam.inoe.ro/articles/compositionally-dependent-network-forming-tendencies-in-s-rich-as-s-glasses/fulltext
Retrieved on: Aug. 18, 2025 -
W. J. Hehre, R. F. Stewart, J. A. Pople, “Self-consistent molecular orbital
methods I. Use of Gaussian expansions of Slater type atomic orbitals,”
J. Chem. Phys., vol. 51, no. 6, pp. 2657 – 2664,
Sep. 1969.
DOI: 10.1063/1.1672392 -
A. D. McLean, G. S. Chandler, “Contracted Gaussian basis sets for molecular
calculations. I. Second row atoms, Z=11–18,” J. Chem. Phys., vol. 72, no. 10,
pp. 5639 – 5648, May 1980.
DOI: 10.1063/1.438980 -
J. C. Phillips, “Ideally glassy hydrogen-bonded networks,”
Phys. Rev. B., vol. 73, 024210, Jan. 2006.
DOI: 10.1103/PhysRevB.73.024210 -
K. Jackson, “Electric fields in electronic structure calculations: electric
polarizabilities and IR and Raman spectra from first principles,”
Phys. Stat. Solidi B,vol. 217, no. 1, pp. 293 – 310, Jan. 2000.
DOI: 10.1002/(SICI)1521-3951(200001)217:1<293::AID-PSSB293>3.0.CO;2-N -
J. C. Phillips, “Topology of covalent non-crystalline solids. I: Short-range
order in chalcogenide alloys,” J. Non-Cryst. Solids, vol.34,
no. 2, pp. 153 – 181, Oct.-Nov. 1979.
DOI: 10.1016/0022-3093(79)90033-4 -
M. F. Thorpe, “Continuous deformations in random networks,”
J. Non-Cryst. Solids,
vol. 57, no. 3,
pp. 355 – 370, Sep. 1983.
DOI: 10.1016/0022-3093(83)90424-6 -
M. F. Thorpe, “Bulk and surface floppy modes,”
J. Non-Cryst. Solids,
vol. 182, no. 1 – 2, pp. 135 – 142, Mar. 1995.
DOI: 10.1016/0022-3093(94)00545-1 -
N. Morimoto, “The crystal structure of orpiment (As2S3)
refined,” Miner. J., vol. 1, no. 3,
pp. 160 – 169, 1954.
DOI: 10.2465/minerj1953.1.160 -
D. J. E. Mullen, W. Nowacki, “Refinement of the crystal structures of
realgar, AsS and orpiment, As2S3,”
Z. Kristallogr. Cryst. Mater., vol. 136,
no. 1 – 6, pp. 48 – 65, 1972.
DOI: 10.1524/zkri.1972.136.16.48 -
M. Kalyva et al., “Reversible amorphous-to-amorphous transitions in
chalcogenide films: correlating changes in structure and optical
properties,” Adv. Functional Mater.,vol. 23, no. 16, pp. 2052 –
2059, Apr. 2013.
DOI: 10.1002/adfm.201202461 -
A. S. Ahmad et al., “Reversible devitrification in amorphous As2Se
3 under pressure,” Phys. Rev. B,vol.94,
195211, Nov. 2016.
DOI: 10.1103/PhysRevB.94.195211 -
A. S. Ahmad et al., “Breakdown of intermediate range order in AsSe
chalcogenide glass,” J. Appl. Phys., vol. 120, no. 14, 145901, Oct.
2016.
DOI: 10.1063/1.4964798 -
M. Shpotyuk, O. Shpotyuk, R. Golovchak, J. McCloy, B. Riley, “Compositional
trends of g-induced optical changes observed in chalcogenide glasses of
binary As-S system,” J. Non-Cryst. Solids, vol. 386,
pp. 95 – 99, Feb. 2014.
DOI: 10.1016/j.jnoncrysol.2013.12.001 -
O. Shpotyuk, M. Shpotyuk, S. Ubizskii, “Radiation-induced optical effects in
chalcogenide semiconductor glassesm,” RAD J.,vol. 2, no. 2,
pp. 94 – 100, 2017.
DOI: 10.21175/RadJ.2017.02.021 -
M. Shpotyuk, A. Kovalskiy, R. Golovchak,
O. Shpotyuk, “Phenomenology of g-irradiation-induced changes in optical
properties of chalcogenide semiconductor glasses: a case study of binary
arsenic sulfides,” J.Non-Cryst. Solids,
vol. 498, pp. 315 – 322, Oct. 2018.
DOI: 10.1016/j.jnoncrysol.2018.04.006 -
M. Shpotyuk, O. Shpotyuk, V. Balitska, “Combined configuration-enthalpy
model describing radiation-optical responses in chalcogenide semiconductor
glasses,” Rad. Phys. Chem., vol. 165, 108401,
Dec. 2019.
DOI: 10.1016/j.radphyschem.2019.108401 -
M. Shpotyuk, O. Shpotyuk, A. Kovalskiy, “On the prediction of structural
modification efficiency in glass-forming chalcogenide networks,”
Phys. Chem. Glasses: Eur. J. Glass Sci. Technol., vol. 61, no. 2,
pp. 49 – 56, Apr. 2020.
DOI: 10.13036/17533562.61.2.13 -
O. Shpotyuk et al., “Radiation-induced modification effects in
covalent-network glass formers: phenomenological description within unified
configuration-enthalpy model,” Appl. Rad. Isotopes, vol. 206,
111255, Apr. 2024.
DOI: 10.1016/j.apradiso.2024.111255
PMid: 38422943







