In this study, a new reader has been designed to measure the amount of radiation dose detected by RadFET (pMOSFET) sensor. The designed reader calculates the voltage threshold voltage (Vth) shifts of the pMOSFET to determine radiation dose and display it on the Touch TFT LCD screen placed on the printed electronic circuit. It has been developed more in particular to be easily used in radiotherapy and other healthcare field which have radiation sources. The electronic board has also been developed to adjust and read the data for SiO₂ and Er₃O₂ sensor structured RadFETs. The electronic card has been designed with STM32F103 series processor that has 12-bit ADC resolution. In addition, specific Bluetooth circuit has been designed for communication. Thus, dose measurements versus date graph, personal details (name, age etc.) can be sent to personal computers and devices such as smart phones and tablets. Dose measurements can be currently kept by micro SD card.

1. A. Holmes-Siedle, “The space-charge dosimeter: General principles of a new method of radiation detection,” Nucl. Instrum. Meth., vol. 121, no. 1, pp. 169 – 179, Oct. 1974.
   DOI: 10.1016/0029-554X(74)90153-0
2. C. Pongpisit, L. Adul, G. Qi-Wei, Sa-Ngiamsak Chiranut, “Biasing technique of MOSFET for an accurate and real-time-readout radiation sensor,” J. East Asian Stud., no. 16, pp. 175 – 183, Apr. 2018.
   Retrieved from: http://petit.lib.yamaguchi-u.ac.jp/G0000006y2j2/file/27439/20180509100641/D300016000011.pdf
   Retrieved on: Jul. 12, 2019
3. G. Mitev, S. S. Jordanova, M. G. Mitev, “Enhanced Read-out Systems for RADFET dosimeters research,” Anu. J. Electron., pp. 250 – 253, 2015.
   Retrieved from: http://ecad.tu-sofia.bg/et/2015/ET2015/AJE-2015/250_Paper-M_Mitev.pdf
   Retrieved on: Jul. 21, 2019
4. S. Kaya, A. Jaksic, R. Duane, N. Vasovic, E. Yilmaz, “FET-based radiation sensors With Er2O3 gate dielectric,” Nucl. Instrum. Methods Phys. Res., vol. 430, pp. 36 – 41, Sep. 2018.
   Retrieved from: https://www.varadis.com/wp-content/uploads/2019/06/1-s2.0-S0168583X18303835-main.pdf
   Retrieved on: Aug. 18, 2019
5. G. S. Ristic, N. D. Vasovic, M. Kovacevic, A. B. Jaksic, “The sensitivity of 100 nm RADFETs with zero gate bias up to dose of 230 Gy(Si),” Nucl. Instrum. Methods Phys. Res., vol. 269, no. 23, pp. 2703 – 2708, Dec. 2011.
   DOI: 10.1016/j.nimb.2011.08.015
6. Medium-density performance line ARM®-based. 32-bit MCU with 64 or 128 KB Flash, USB, CAN, 7 timers, 2 ADCs, 9 com. Interfaces, STMicroelectronics, Geneva, Switzerland, 2015.
   Retrieved from: https://www.st.com/resource/en/datasheet/stm32f103c8.pdf
   Retrieved on: Jan. 27, 2019
7. N. D. Vasovic, G. S. Ristic, “A new microcontroller-based RADFET dosimeter reader,” Radiat. Meas., vol. 47, no. 4, pp. 272 – 276, Apr. 2012.
   DOI: 10.1016/j.radmeas.2012.01.017