Neodymium oxide (Nd₂O₃) was deposited by the sol–gel method on a P-type 〈100〉 silicon wafer. The chemical characterization of neodymium oxide was performed by Fourier transform infrared spectroscopy (FTIR), X-ray diffraction (XRD), energy-dispersive spectra (EDS), and atomic force microscopy (AFM), and surface morphology was examined by the scanning electron microscopy (SEM). In order to examine the neodymium oxide radiation response, samples were irradiated using a Co-60 gamma-ray source from 1 to 100 Gy at a dose rate of 0.015 Gy/s. A dramatic variation was observed in the capacitance and conductance with increasing radiation dose. Irradiation creates a large number of e-h pairs and defects in the structure. For this reason, significant changes can occur in the electrical characteristics of the device. Consequently, neodymium oxide may have significant usage for microelectronic technology for radiation sensors.

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