In this study, the electrical characteristics and surface morphology of Vanadium Oxide-VO₂ MOS Devices have been investigated. VO₂ thin films were deposited onto n-type (100) silicon wafers by using the RF magnetron sputtering system. Thin films were annealed at different temperatures in the Argon environment. The FTIR and XRD measurements were performed to check the surface morphology, crystal structure and bond structures of VO2 thin films, respectively. Except from the sample that was annealed at 700°C, the VO₂ thin films showed amorphous structure. In the ATR-FTIR analysis, V-O-V bending mode at 617 cm^-1 and V=O stretching vibrations at 990 cm^-1 were seen on vanadium oxide thin films. While analyzing the electrical characteristics, it has been noticed that annealing had effects on the C-V and G/w-V curves. The obtained results demonstrate that VO₂ may have the potential to be used in MOS-based applications.

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