Vol. 5, 2020

Material Science

INVESTIGATION OF ELECTRICAL CHARACTERISTICS AND SURFACE MORPHOLOGY OF VANADIUM OXIDE-VO2 MOS DEVICES

Umutcan Gürer and Ercan Yilmaz

Pages: 11-14

DOI: 10.37392/RapProc.2020.04

In this study, the electrical characteristics and surface morphology of Vanadium Oxide-VO2 MOS Devices have been investigated. VO2 thin films were deposited onto n-type (100) silicon wafers by using the RF magnetron sputtering system. Thin films were annealed at different temperatures in the Argon environment. The FTIR and XRD measurements were performed to check the surface morphology, crystal structure and bond structures of VO2 thin films, respectively. Except from the sample that was annealed at 700°C, the VO2 thin films showed amorphous structure. In the ATR-FTIR analysis, V-O-V bending mode at 617 cm-1 and V=O stretching vibrations at 990 cm-1 were seen on vanadium oxide thin films. While analyzing the electrical characteristics, it has been noticed that annealing had effects on the C-V and G/w-V curves. The obtained results demonstrate that VO2 may have the potential to be used in MOS-based applications.
  1. O. Pakma, C. Özaydın, Ş. Özden, I. A. Kariper, Ö. Güllü, “Synthesis and characterization of vanadium oxide thin films on different substrates,” J. Mater. Sci.: Mater. Electron., vol. 28, no. 15, pp. 10909 – 10913, Aug. 2017.
    DOI: 10.1007/s10854-017-6870-1
  2. R. Lok, S. Kaya, H. Karacali, E. Yilmaz, “A detailed study on the frequency-dependent electrical characteristics of Al/HfSiO4/p-Si MOS capacitors,” J. Mater. Sci.: Mater. Electron., vol. 27, no. 12, pp. 13154 – 13160, Dec. 2016.
    DOI: 10.1007/s10854-016-5461-x
  3. A. Kahraman, “Understanding of post deposition annealing and substrate temperature effects on structural and electrical properties of Gd2O3 MOS capacitor,” J. Mater. Sci.: Mater. Electron., vol. 29, no. 10, pp. 7993 – 8001, May 2018.
    DOI: 10.1007/s10854-018-8804-y
  4. A. Kahraman, U. Gurer, R. Lok, S. Kaya, E. Yilmaz, “Impact of interfacial layer using ultra-thin SiO2 on electrical and structural characteristics of Gd2O3 MOS capacitor,” J. Mater. Sci.: Mater. Electron., vol. 29, no. 20, pp. 17473 – 17482, Oct. 2018.
    DOI: 10.1007/s10854-018-9847-9
  5. A. Kahraman, H. Karacali, E. Yilmaz, “Impact and origin of the oxide-interface traps in Al/Yb2O3/n-Si/Al on the electrical characteristics,” J. Alloys Compd., vol. 825, article no. 154171, Jun. 2020.
    DOI: 10.1016/j.jallcom.2020.154171
  6. S. Abubakar, S. Kaya, H. Karacali, E. Yilmaz, “The gamma irradiation responses of yttrium oxide capacitors and first assessment usage in radiation sensors,” Sens. Actuator A Phys., vol. 258, pp. 44 – 48, May 2017.
    DOI: 10.1016/j.sna.2017.02.022
  7. R. Lok, E. Budak, E. Yilmaz, “Radiation response of zirconium silicate P-MOS capacitor,” Microelectron. Reliab., vol. 109, article no. 113663, Jun. 2020.
    DOI: 10.1016/j.microrel.2020.113663
  8. J. Liang, J. Li, L. Hou, X. Liu, “Tunable Metal-Insulator Properties of Vanadium Oxide Thin Films Fabricated by Rapid Thermal Annealing,” ECS J. Solid State Sci. Technol., vol. 5, no. 5, pp. P293 – P298, Mar. 2016.
    DOI: 10.1149/2.0281605jss
  9. H. Yin et al., “Self-assembled vanadium oxide nanoflakes for p-type ammonia sensors at room temperature,” Nanomaterials, vol. 9, no. 3, article no. 317, Mar. 2019.
    DOI: 10.3390/nano9030317
    PMid: 30818822
    PMCid: PMC6473898
  10. A. Rakshit, D. Biswas, S. Chakraborty, “Deposition and characterization of vanadium oxide based thin films for MOS device applications,” in Proc. DAE Solid State Physics Symposium (DAE SSPS 2017), Mumbai, India, 2018.
    DOI: 10.1063/1.5029064
  11. D. Yılmaz, B. Güzeldir, T. Akkuş, T. Öznülüer, “X- and gamma-ray irradiation effects on vanadium pentoxide thin films,” Spectrosc. Lett., vol. 51, no. 6, pp. 297 – 301, 2018.
    DOI: 10.1080/00387010.2018.1475397
  12. I. G. Madiba et al., “Effects of gamma irradiations on reactive pulsed laser deposited vanadium dioxide thin films,” Appl. Surf. Sci., vol. 411, pp. 271 – 278, Jul. 2017.
    DOI: 10.1016/j.apsusc.2017.03.131
  13. S. M. Sze, K. K. Ng, Physics of Semiconductor Devices, 3rd ed., Hoboken (NJ), USA: J. Wiley and Sons, 2006.
    DOI: 10.1002/9780470068328.fmatter
  14. M. Zhu et al., “New route for modification of thermochromic properties of vanadium dioxide films via high-energy X-ray irradiation,” Ceram. Int., vol. 45, no. 2, pp. 1661 – 1669, Feb. 2019.
    DOI: 10.1016/j.ceramint.2018.10.043
  15. Y. Waseda, E. Matsubara, K. Shinoda, X-Ray Diffraction Crystallography: Introduction, Examples and Solved Problems , 1st ed., Berlin Heidelberg, Germany: Springer-Verlag, 2011.
    Retrieved from: http://library.lol/main/FED836C9F6CF8C06C6CCECDEC62CE07F
    Retrieved on: Sep. 13, 2019
  16. I. Derkaoui et al., “Structural and optical properties of hydrothermally synthesized vanadium oxides nanobelts,” IOP Conf. Ser.: Mater. Sci. Eng., vol. 186, article no. 012007, 2017.
    DOI: 10.1088/1757-899X/186/1/012007
  17. S. Pavasupree, Y. Suzuki, A. Kitiyanan, S. Pivsa-Art, S. Yoshikawa, “Synthesis and characterization of vanadium oxides nanorods,” J. Solid State Chem., vol. 178, no. 6, pp. 2152 – 2158, Jun. 2005.
    DOI: 10.1016/j.jssc.2005.03.034
  18. A. Kahraman, E. Yilmaz, S. Kaya, A. Aktag, “Effects of post deposition annealing, interface states and series resistance on electrical characteristics of HfO2 MOS capacitors,” J. Mater. Sci.: Mater. Electron., vol. 26, no. 11, pp. 8277 – 8284, Nov. 2015.
    DOI: 10.1007/s10854-015-3492-3
  19. S. Abubakar, E. Yilmaz, “Optical and electrical properties of E-Beam deposited TiO2/Si thin films,” J. Mater. Sci.: Mater. Electron., vol. 29, no. 12, pp. 9879 – 9885, Jun. 2018.
    DOI: 10.1007/s10854-018-9029-9