Vol. 5, 2020

Material Science

STRUCTURAL AND ELECTRICAL CHARACTERISTICS OF THE Al/Al2O3/SiO2/n-Si METAL-OXIDE-SEMICONDUCTOR CAPACITOR

Nakibinge Tawfiq Kimbugwe, Huseyin Karacali, Ercan Yilmaz

Pages: 21-25

DOI: 10.37392/RapProc.2020.06

In this study, the structural and electrical characteristics of the Al/Al2O3/SiO2/n-Si Metal-Oxide-Semiconductor (MOS) structure were investigated. Al2O3 films were deposited on the n-type Si wafer by RF magnetron sputtering after the growth of SiO2 by dry oxidation. The fabricated Al2O3/SiO2/n-Si structures were annealed at 250oC, 450oC, and 750oC in a N2 ambient. XRD and AFM measurements were conducted in order to examine the crystallinity and the surface topography of the Al2O3/SiO2/n-Si structure. Aluminum (Al) front and back contacts were then deposited by RF magnetron sputtering. C-V and G/w-V measurements were performed at low and high frequencies with the aim of analyzing the electrical characteristics. The discrepancy in the C-V curves for different frequencies stemmed from the defects and dangling bonds at the interfaces and in the oxide layers
  1. A. Kahraman, U. Gurer, R. Lok, S. Kaya, E. Yilmaz, “Impact of interfacial layer using ultra-thin SiO2 on electrical and structural characteristics of Gd2O3 MOS capacitor,” J. Mater. Sci. Mater. Electron., vol. 29, no. 20, pp. 17473 – 17482, Oct. 2018.
    DOI: 10.1007/s10854-018-9847-9
  2. G. Lutz, “Semiconductors as Detectors,” in Semiconductor Radiation Detectors , 1st ed., Berlin/Heidelberg, Germany: Springer-Verlag, 2007, ch. 2, sec. 4, pp. 79 – 93.
    DOI: 10.1007/978-3-540-71679-2
  3. C. G. Turk, S. O. Tan, S. Altındal, B. Inem, “Frequency and voltage dependence of barrier height, surface states, and series resistance in Al/Al2O3/p-Si structures in wide range frequency and voltage,” Physica B Condens. Matter, vol. 582, article no. 411979, Apr. 2020.
    DOI: 10.1016/j.physb.2019.411979
  4. S. Kaya, E. Budak, E. Yilmaz, “Effects of annealing temperature on electrical characteristics of sputtered Al/Al2O3/p-Si (MOS) capacitors,” Turk. J. Phys., vol. 42, no. 4, pp. 470 – 477, Aug. 2018.
    DOI: 10.3906/fiz-1805-1
  5. S. Kaya, E. Yilmaz, “Influences of Co-60 gamma-ray irradiation on electrical characteristics of Al2O3 MOS capacitors,” J. Radioanal. Nucl. Chem., vol. 302, pp. 425 – 431, Oct. 2014.
    DOI: 10.1007/s10967-014-3295-7
  6. A. Kahraman, S. C. Deevi, E. Yilmaz, “Influence of frequency and gamma irradiation on the electrical characteristics of Er2O3, Gd2O3, Yb2O3, and HfO2 MOS-based devices,” J. Mater. Sci., vol. 55, no. 81, pp. 7999 – 8040, Jul. 2020.
    DOI: 10.1007/s10853-020-04531-8
  7. D. Wu et al., “Structural and electrical characterization of Al2O3/HfO2/Al2O3 on strained SiGe,” Solid State Electron., vol. 49, no. 2, pp. 193 – 197, Feb. 2005.
    DOI: 10.1016/j.sse.2004.08.012
  8. N. T. Kimbugwe, E. Yilmaz, “Impact of SiO2 interfacial layer on the electrical characteristics of Al/Al2O3/SiO2/n-Si metal–oxide–semiconductor capacitors,” J. Mater. Sci. Mater. Electron., vol. 31, no. 20, pp. 12372 - 12381, Aug. 2020.
    DOI: 10.1007/s10854-020-03783-z
  9. S. M. Sze, M. K. Lee, Semiconductor Devices: Physics and Technology, 3rd ed., Hoboken (NJ), USA: J. Wiley and Sons, 2012.
    Retrieved from: http://libgen.rs/book/index.php?md5=AF0D3EA002AB461DFDFC92BCFAD35BC4
    Retrieved on: Apr. 11, 2020
  10. A. Aktag, A. Mutale, E. Yılmaz, “Determination of frequency and voltage dependence of electrical properties of Al/(Er2O3/SiO2/n-Si)/Al MOS capacitor,” J. Mater. Sci. Mater. Electron., vol. 31, no. 12, pp. 9044 – 9051, Jun. 2020.
    DOI: 10.1007/s10854-020-03438-z
  11. A. Kahraman, H. Karacali, E. Yilmaz, “Impact and origin of the oxide-interface traps in Al/Yb2O3/n-Si/Al on the electrical characteristics,” J. Alloys Compd., vol. 825, article no. 154171, Jun. 2020.
    DOI: 10.1016/j.jallcom.2020.154171
  12. S. Kaya, E. Yilmaz, “A comprehensive study on the frequency-dependent electrical characteristics of Sm2O3 MOS capacitors,” IEEE Trans. Electron Devices, vol. 62, no. 3, pp. 980 – 987, Mar. 2015.
    DOI: 10.1109/TED.2015.2389953
  13. E. Yilmaz, I. Dogan, R. Turan, “Use of Al2O3 layer as a dielectric in MOS based radiation sensors fabricated on a Si substrate,” Nucl. Instrum. Methods Phys. Res. B, vol. 266, no. 22, pp. 4896 – 4898, Nov. 2008.
    DOI: 10.1016/j.nimb.2008.07.028