Vol. 5, 2020

Radiation Detectors

OPTICAL AND ELECTRICAL CHARACTERISTICS OF FABRICATED THREE-LAYER Al/Er2O3/Eu2O3/SiO2/n-Si/Al MOS CAPACITORS FOR RADIATION SENSORS

Saleh Abubakar, Ercan Yilmaz

Pages: 29-32

DOI: 10.37392/RapProc.2020.08

In the development of radiation sensors based on MOSFET devices, the process of enhancing gate dielectric radiation response should be considered, as the gate dielectric is a sensitive area. In this study, optical and electrical characteristics of fabricated three-layered Al/Er2O3/Eu2O3/SiO2/n-Si/Al MOS capacitors for radiation sensors were comprehensively investigated. MOS capacitors with 15 nm thin SiO2, 25 nm thin Eu2O3, and 110 nm thick Er2O3 stacked gate oxide layers were grown on the n-Silicon substrate by thermal oxidation and electron beam evaporation systems, respectively. The aluminum gate and back contacts of the capacitors were formed by RF magnetron sputtering. The optical and electrical properties of the thin films and capacitors were analyzed by studying the reflection, transmittance, refractive index and absorption coefficient, Capacitance–Voltage, Conductance–Voltage, and Current density–Voltage measurements. It is observed from these studies that interfacial layers, which appeared to cause interfacial dipoles, are used to reduce the interface trap charge density and oxide trap charge density in order to improve the charge storage capacity of the device.
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