Vol. 6, 2021

Material Science

Frequency Dependent Electrical Characteristics of Al/SiO2/SiNWs/n-Si MOS Capacitors

Alex Mutale, Ercan Yilmaz

Pages: 91–96

DOI: 10.37392/RapProc.2021.19

In this work, the frequency dependent electrical characteristics of Al/SiO2/SiNWs/n-Si MOS capacitors were investigated. The electrical properties of the capacitors were calculated from the capacitance-voltage (C-V) and conductance-voltage (Gm/ɷ-V) measurements for several frequencies ranging from 50kHz to 1MHz. Our experimental results showed that both frequency and voltage variations had a significant impact on the C-V and Gm/ɷ-V characteristics. The C-V characteristics were found to decrease with an increase in the applied voltage frequency due to the distribution of the interface states (N it) within the oxide layer. The Gm /ɷ-V characteristics were also found to have peaks and the peaks increased with an increase in the applied voltage frequency except for 50kHz and 100kHz. This was caused by the existence of series resistance (Rs) and Nit. We have also studied the frequency dependence on the electrical parameters such as Rs, N it, doping concentration (ND), and barrier height (ФB). The values of R s were found to decrease with increasing frequency, while the values of Nit, ND and (ФB) were also found to increase with increasing applied frequency.
  1. A. R. Wazzan, “MOS (Metal Oxide Semiconductor) Physics and Technology,” Nucl. Technol., vol. 74, no. 2, pp. 235 – 237, Aug. 1986.
    DOI: 10.13182/nt86-a33811
  2. D. A. Neamen, Semiconductor Physics and Devices, 3rd ed., New York (NY), USA: McGraw-Hill, 2003.
    Retrieved from: http://www.fulviofrisone.com/attachments/article/403/Semiconductor%20Physics%20And%20Devices%20-%20Donald%20Neamen.pdf
    Retrieved on: Nov. 25, 2020
  3. I. Leontis, M. A. Botzakaki, S. N. Georga, A. G. Nassiopoulou, “Study of Si Nanowires Produced by Metal-Assisted Chemical Etching as a Light-Trapping Material in n-type c-Si Solar Cells,” ACS Omega, vol. 3, no. 9, pp. 10898 – 10906, Sep. 2018.
    DOI: 10.1021/acsomega.8b01049
    PMid: 31459200
    PMCid: PMC6645058
  4. R. Nezasa, Y. Kurokawa, N. Usami, “Evaluation of Si Nanowire MOS Capacitor Using High-k Dielectric Materials,” in Proc. IEEE 18th Int. Conf. Nanotechnol. (IEEE-NANO), Cork, Ireland, 2018, pp. 2018 – 2021.
    DOI: 10.1109/NANO.2018.8626356
  5. E. Hourdakis, A. Casanova, G. Larrieu, A. G. Nassiopoulou, “Three-dimensional vertical Si nanowire MOS capacitor model structure for the study of electrical versus geometrical Si nanowire characteristics,” Solid State Electron., vol. 143, pp. 77 – 82, May 2018.
    DOI: 10.1016/j.sse.2017.11.003
  6. P. H. Morel et al., “Ultra high density three dimensional capacitors based on Si nanowires array grown on a metal layer,” Appl. Phys. Lett., vol. 101, no. 8, 083110, Aug. 2012.
    DOI: 10.1063/1.4746762
  7. M. Naffeti, P. A. Postigo, R. Chtourou, M. A. Zaïbi, “Elucidating the effect of etching time key-parameter toward optically and electrically-active silicon nanowires,” Nanomaterials, vol. 10, no. 3, 404, Feb. 2020.
    DOI: 10.3390/nano10030404
    PMid: 32106503
    PMCid: PMC7152846
  8. J. Wu et al., “RF characterization of vertical wrap-gated InAs/High-κ nanowire capacitors,” IEEE Trans. Electron Devices, vol. 63, no. 2, pp. 584 – 589, Feb. 2016.
    DOI: 10.1109/TED.2015.2506040
  9. C. Zhang, M. Xu, P. D. Ye, X. Li, “A distributive-transconductance model for border traps in III-V/high-k MOS capacitors,” IEEE Electron Device Lett., vol. 34, no. 6, pp. 735 – 737, Jun. 2013.
    DOI: 10.1109/LED.2013.2255256
  10. N. Bachtouli, S. Aouida, B. Bessais, “Formation mechanism of porous silicon nanowires in HF/AgNO3 solution,” Microporous Mesoporous Mater., vol. 187, pp. 82 – 85, Mar. 2014.
    DOI: 10.1016/j.micromeso.2013.11.048
  11. S. Ngqoloda, “Vertically aligned silicon nanowires synthesised by metal assisted chemical etching for photovoltaic applications,” M.Sc. thesis, University of the Western Cape, Dept. of Physics, Bellville, South Africa, 2015.
    Retrieved from: http://etd.uwc.ac.za/xmlui/handle/11394/4872
    Retrieved on: Feb. 18, 2021
  12. A. M. Akbaş, O. Çiçek, Ş. Altındal, Y. Azizian-Kalandaragh, “Frequency Response of C–V and G/ω-V Characteristics of Au/(Nanographite-doped PVP)/n-Si Structures,” J. Mater. Sci. Mater. Electron., vol. 32, no. 1, pp. 993 – 1006, Jan. 2021.
    DOI: 10.1007/s10854-020-04875-6
  13. A. Mutale, S. C. Deevi, E. Yilmaz, “Effect of annealing temperature on the electrical characteristics of Al/Er2O3/n-Si/Al MOS capacitors,” J. Alloys Compd., vol. 863, 158718, May 2021.
    DOI: 10.1016/j.jallcom.2021.158718
  14. A. Tataroğlu, Ş. Altındal, Y. Azizian-Kalandaragh, “C-V-f and G/ω-V-f characteristics of Au/(In2O3-PVP)/n-Si (MPS) structure,” Physica B Condens. Matter, vol. 582, 411996, Apr. 2020.
    DOI: 10.1016/j.physb.2020.411996
  15. S. Maurya, “Effect of zero bias Gamma ray irradiation on HfO2 thin films,” J. Mater. Sci. Mater. Electron., vol. 27, no. 12, pp. 12796 – 12802, Dec. 2016.
    DOI: 10.1007/s10854-016-5412-6
  16. Ç. G. Türk, S. O. Tan, Ş. Altındal, B. İnem, “Frequency and voltage dependence of barrier height, surface states, and series resistance in Al/Al2O3/p-Si structures in wide range frequency and voltage,” Physica B Condens. Matter, vol. 582, 411979, Apr. 2020.
    DOI: 10.1016/j.physb.2019.411979
  17. A. Aktağ, A. Mutale, E. Yılmaz, “Determination of frequency and voltage dependence of electrical properties of Al/(Er2O3/SiO2/n-Si)/Al MOS capacitor,” J. Mater. Sci. Mater. Electron., vol. 31, no. 11, pp. 9044 – 9051, Jun. 2020.
    DOI: 10.1007/s10854-020-03438-z
  18. A. Tataroǧlu, G. G. Güven, S. Yilmaz, A. Büyükbas, “Analysis of barrier height and carrier concentration of MOS capacitor using C-f and G/ω-f measurements,” Gazi Univ. J. Sci., vol. 27, no. 3, pp. 909 – 915, 2014.
    Retrieved from: https://dergipark.org.tr/tr/download/article-file/83667
    Retrieved on: Feb. 10, 2021
  19. A. Kahraman, S. C. Deevi, E. Yilmaz, “Influence of frequency and gamma irradiation on the electrical characteristics of Er2O3, Gd2O3, Yb2O3, and HfO2 MOS-based devices,” J. Mater. Sci., vol. 55, no. 19, pp. 7999 – 8040, Jul. 2020.
    DOI: 10.1007/s10853-020-04531-8
  20. S. Abubakar, E. Yilmaz, “Effects of series resistance and interface state on electrical properties of Al/Er2O3/Eu2O3/SiO2/n-Si/Al MOS capacitors,” Microelectron. Eng., vol. 232, 111409, Aug. 2020.
    DOI: 10.1016/j.mee.2020.111409
  21. E. Yükseltük, M. Çotuk, S. Zeyrek, Ş. Altındal, M. M. Bülbül, “The Investigation of Frequency and Voltage Dependence of Electrical Characteristics in Al/P3HT/p-Si (MPS) Structures,” Mater. Today Proc., vol. 18, pp. 1842 – 1851, 2019.
    DOI: 10.1016/j.matpr.2019.06.672