Rare earth oxides (REOs) play an important role in the semiconductor technology. Europium oxide (Eu₂O₃) is one of REOs and it has been used in many applications such as optoelectronics, telecommunications, microelectronics and optical devices. However, in this study, Eu₂O₃ MOS capacitors have been fabricated by using the Electron Beam Evaporation (E-Beam) technique and the effects of different annealing temperatures on them have been investigated. Before and after annealing, the crystallographic and morphological properties of the Eu₂O₃ films have been analyzed by X-ray Diffraction and Atomic Force Microscopy. The electrical properties of the devices have been investigated using measuring C-V, G/ω-V characteristics. This preliminary study shows that Europium oxide can be suitable for application as a thin film.

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