FREQUENCY RESPONSE ON THE ELECTRICAL CHARACTERISTICS OF SiNWS BASED MOS CAPACITOR WITH HIGH-K MATERIAL

Mailes C. Zulu, Erhan Budak, Ercan Yilmaz

Pages: 35–39

DOI: 10.37392/RapProc.2022.09

In this study we report the effect of different frequency on SiNWs based capacitor. The C-V and Gm/ω-V were carried at different frequency of 50 kHz to 1MHz. We found that the capacitance and conductance value decreased as the value of frequency increased and this was as a result of the distribution of interface trap charges in the dielectric layer. The effect of frequency on series resistance (Rs) and interface states density (Dit) were investigated. It was found that the Rs-V curves shifted toward the inversion region, while reducing in the accumulation region. The Dit value showed a decrease in the applied voltage frequency. After removing the effect of Rs from C-V and Gm/ ω-V curves, we found that the capacitance value increased significantly compared to uncorrected one, while the corrected conductance-voltage (Gc/ω-V) had peaks between 0.26V and 2.03V. Moreover, the obtained Dit value was on the order of 1010eV-1 cm -2.
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