In this study we report the effect of different frequency on SiNWs based capacitor. The C-V and G_m/ω-V were carried at different frequency of 50 kHz to 1MHz. We found that the capacitance and conductance value decreased as the value of frequency increased and this was as a result of the distribution of interface trap charges in the dielectric layer. The effect of frequency on series resistance (R_s) and interface states density (D_it) were investigated. It was found that the R_s-V curves shifted toward the inversion region, while reducing in the accumulation region. The D_it value showed a decrease in the applied voltage frequency. After removing the effect of R_s from C-V and G_m/ ω-V curves, we found that the capacitance value increased significantly compared to uncorrected one, while the corrected conductance-voltage (Gc/ω-V) had peaks between 0.26V and 2.03V. Moreover, the obtained D_it value was on the order of 10¹⁰eV^-1 cm ^-2.

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